Edward Yi Chang,: search on Z-Library

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1

Ge/IIIV fin field-effect transistor common gate process and numerical simulations

Chen, Bo-Yuan, Chen, Jiann-Lin, Chu, Chun-Lin, Luo, Guang-Li, Lee, Shyong, Chang, Edward Yi

Journal:

Journal of Micro/Nanolithography MEMS and MOEMS

Year:

2017

Language:

english

File:

PDF, 2.15 MB

english, 2017

2

Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations

Fang, Chao-Yi, Huang, Weng-Jung, Chang, Edward Yi, Lin, Chia-Feng, Feng, Ming-Shiann

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 188 KB

english, 2003

3

Effect of surface passivation by a low pressure and temperature environment-grown thermal oxide layer for multi-crystalline silicon solar cells

Liao, Shun Sing, Chuang, Chuan Lung, Lin, Yueh Chin, Dee, Chang Fu, Majlis, Burhanuddin Yeop, Chang, Edward Yi

Journal:

Thin Solid Films

Year:

2018

Language:

english

File:

PDF, 1.31 MB

english, 2018

4

[IEEE 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Hsinchu, Taiwan (2015.6.29-2015.7.2)] 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits - An Au-free GaN high electron mobility transistor with Ti/Al/W Ohmic metal structure

Yao, Jing-Neng, Lin, Yueh-Chin, Chuang, Yu-Lin, Huang, Yu-Xiang, Shih, Wang-Cheng, Sze, Simon M., Chang, Edward Yi

Year:

2015

Language:

english

File:

PDF, 241 KB

english, 2015

5

Effects of Al[sub x]Ga[sub 1−x]N interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition

Lin, Kung-Liang, Chang, Edward-Yi, Hsiao, Yu-Lin, Huang, Wei-Ching, Luong, Tien-Tung, Wong, Yuen-Yee, Li, Tingkai, Tweet, Doug, Chiang, Chen-Hao

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2010

Language:

english

File:

PDF, 679 KB

english, 2010

6

Bias-Dependent Radio Frequency Performance for 40 nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600 GHz

Fatah, Faiz, Kuo, Chien-I, Hsu, Heng-Tung, Chiang, Che-Yang, Hsu, Ching-Yi, Miyamoto, Yasuyuki, Chang, Edward Yi

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 448 KB

english, 2012

7

An ultra low cost and miniature 950–2050 MHz GaAs MMIC downconverter‐I: Design approach and simulation

Hsieh, Ting‐Hua, Wang, Huei, Wang, Tahui, Chen, Tzu‐Hung, Chiang, Yit‐Chyun, Tseng, San‐Tien, Chen, Andy, Yi Chang, Edward

Journal:

Journal of the Chinese Institute of Engineers

Year:

1995

Language:

english

File:

PDF, 556 KB

english, 1995

8

Room temperature self-organized gold nanoparticles materials for embedded electronic devices

Chun-Chi Chen, Hsin-Chiang You, Edward Yi Chang, Fu-Hsiang Ko

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2013

Language:

english

File:

PDF, 608 KB

english, 2013

9

Communication—Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications

Yao, Jing-Neng, Lin, Yueh-Chin, Wong, Ying-Chieh, Huang, Ting-Jui, Hsu, Heng-Tung, Sze, Simon M., Chang, Edward Yi

Journal:

ECS Journal of Solid State Science and Technology

Year:

2019

Language:

english

File:

PDF, 581 KB

english, 2019

10

Is personal growth initiative associated with later life satisfaction in Chinese college students? A 15‐week prospective analysis

Chang, Edward C., Yang, Hongfei, Yi, Shangwen, Xie, Fei, Liu, Jiting, Ren, Haining, Zhang, Jiaqi, Zhang, Zhuoran, Wu, Runzhe, Lin, Yijing, Li, Mingqi, Wu, Kaidi, Ip, Ka, Lucas, Abigael G., Chang, Oliv

Journal:

Asian Journal of Social Psychology

Year:

2019

Language:

english

File:

PDF, 98 KB

english, 2019

11

Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition

Hsiao, Chih-Jen, Ha, Minh-Thien-Huu, Liu, Chun-Kuan, Nguyen, Hong-Quan, Yu, Hung-Wei, Chang, Sheng-Po, Wong, Yuen-Yee, Maa, Jer-Shen, Chang, Shoou-Jinn, Chang, Edward Yi

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2017

Language:

english

File:

PDF, 3.55 MB

english, 2017

12

Ge epitaxial films on GaAs (100), (110), and (111) substrates for applications of CMOS heterostructural integrations

Tang, Shih-Hsuan, Kuo, Chien-I, Trinh, Hai-Dang, Yi Chang, Edward, Nguyen, Hong-Quan, Nguyen, Chi-Lang, Luo, Guang-Li

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2013

Language:

english

File:

PDF, 5.99 MB

english, 2013

13

[IEEE 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) - Kuala Lumpur, Malaysia (2012.09.19-2012.09.21)] 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE) - Growth and fabrication of AlGaN/GaN HEMT on SiC substrate

Wong, Yuen-Yee, Chiu, Yu-Sheng, Luong, Tien-Tung, Lin, Tai-Ming, Ho, Yen-Teng, Lin, Yue-Chin, Chang, Edward Yi

Year:

2012

Language:

english

File:

PDF, 387 KB

english, 2012

14

Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy

Yuen-Yee Wong, Edward Yi Chang, Yue-Han Wu, Mantu K. Hudait, Tsung-Hsi Yang, Jet-Rung Chang, Jui-Tai Ku, Wu-Ching Chou, Chiang-Yao Chen, Jer-Shen Maa, Yueh-Chin Lin

Journal:

Thin Solid Films

Year:

2011

Language:

english

File:

PDF, 825 KB

english, 2011

15

Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors

Huang, Wei-Ching, Liu, Kuan-Shin, Wong, Yuen-Yee, Hsieh, Chi-Feng, Chang, Edward-Yi, Hsu, Heng-Tung

Journal:

Japanese Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 972 KB

english, 2015

16

Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design

Tsai, Szu-Ping, Hsu, Heng-Tung, Wuerfl, Joachim, Chang, Edward Yi

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 1.09 MB

english, 2016

17

Electrical Characterization and Materials Stability Analysis of ${\rm La}_{2}{\rm O}_{3}/{\rm HfO}_{2}$ Composite Oxides on n-${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ MOS Capacitors With Different Annealing Temperatures

Lin, Yueh Chin, Trinh, Hai Dang, Chuang, Ting Wei, Iwai, Hiroshi, Kakushima, Kuniyuki, Ahmet, Parhat, Lin, Chun Hsiung, Diaz, Carlos H., Chang, Hui Chen, Jang, Simon M., Chang, Edward Yi

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 719 KB

english, 2013

18

A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs

Lin, Yen-Ku, Bergsten, Johan, Leong, Hector, Malmros, Anna, Chen, Jr-Tai, Chen, Ding-Yuan, Kordina, Olof, Zirath, Herbert, Chang, Edward Yi, Rorsman, Niklas

Journal:

Semiconductor Science and Technology

Year:

2018

Language:

english

File:

PDF, 836 KB

english, 2018

19

Electrical bistabilities behaviour of all-solution-processed non-volatile memories based on graphene quantum dots embedded in graphene oxide layers

Jaafar, Muhammad Musoddiq, Ooi, Poh Choon, Mohd. Razip Wee, M. F., Mohammad Haniff, Muhammad Aniq Shazni, Mohamed, Mohd Ambri, Chang, Edward Yi, Yeop Majlis, Burhanuddin, Dee, Chang Fu

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2019

Language:

english

File:

PDF, 2.59 MB

english, 2019

20

Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition

Ha, Minh Thien Huu, Huynh, Sa Hoang, Do, Huy Binh, Nguyen, Tuan Anh, Luc, Quang Ho, Lee, Ching Ting, Chang, Edward Yi

Journal:

Applied Physics Express

Year:

2018

Language:

english

File:

PDF, 1.54 MB

english, 2018

21

Disassembly mediated fluorescence recovery of gold nanodots for selective sulfide sensing

Yuan, Zhiqin, Peng, Meihua, Shi, Lei, Du, Yi, Cai, Na, He, Yan, Chang, Huan-Tsung, Yeung, Edward S.

Journal:

Year:

2013

Language:

english

File:

PDF, 419 KB

english, 2013

22

Evaluation of Electrical Characteristics of the Copper-Metallized SPDT GaAs Switches at Elevated Temperatures

Wu, Yun-Chi, Chang, Edward Yi, Lin, Yueh-Chin, Hsu, Li-Han

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2008

Language:

english

File:

PDF, 374 KB

english, 2008

23

Discovery of a perceptual distance function for measuring image similarity

Beitao Li, Edward Chang, Yi Wu

Journal:

Multimedia Systems

Year:

2003

Language:

english

File:

PDF, 297 KB

english, 2003

24

Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect

Szu-Ping Tsai,, Heng-Tung Hsu,, Che-Yang Chiang,, Yung-Yi Tu,, Chia-Hua Chang,, Ting-En Hsieh,, Huan-Chung Wang,, Shih-Chien Liu,, Chang, Edward Yi

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 748 KB

english, 2014

25

The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

Huang, Wei-Ching, Chu, Chung-Ming, Hsieh, Chi-Feng, Wong, Yuen-Yee, Chen, Kai-wei, Lee, Wei-I, Tu, Yung-Yi, Chang, Edward-Yi, Dee, Chang Fu, Majlis, B. Y., Yap, S. L.

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.74 MB

english, 2016

26

Ti/Al/Ti/Ni/Au ohmic contacts on AlGaN/GaN high electron mobility transistors with improved surface morphology and low contact resistance

Chiu, Yu-Sheng, Lin, Tai-Ming, Nguyen, Hong-Quan, Weng, Yu-Chen, Nguyen, Chi-Lang, Lin, Yueh-Chin, Yu, Hung-Wei, Yi Chang, Edward, Lee, Ching-Ting

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2014

Language:

english

File:

PDF, 1.99 MB

english, 2014

27

[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Han, Ping-Cheng, Yan, Zong-Zheng, Wu, Chia-Hsun, Chang, Edward Yi, Ho, Yu-Hsuan

Year:

2019

Language:

english

File:

PDF, 1.01 MB

english, 2019

28

Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure

Lumbantoruan, Franky J., Wong, Yuen-Yee, Huang, Wei-Ching, Yu, Hung-Wei, Chang, Edward-Yi

Journal:

Journal of Electronic Materials

Year:

2017

Language:

english

File:

PDF, 1.40 MB

english, 2017

29

[IEEE 2018 IEEE International Reliability Physics Symposium (IRPS) - Burlingame, CA (2018.3.11-2018.3.15)] 2018 IEEE International Reliability Physics Symposium (IRPS) - Investigation of degradation phenomena in GaN-on-Si power MIS-HEMTs under source current and drain bias stresses

Yang, Chih-Yi, Wu, Tian-Li, Hsieh, Tin-En, Chang, Edward Yi

Year:

2018

Language:

english

File:

PDF, 300 KB

english, 2018

30

[IEEE 2020 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2020.6.13-2020.6.14)] 2020 IEEE Silicon Nanoelectronics Workshop (SNW) - Resistive Approach for Extraction of Bias-Dependent Parasitic Resistance, Mobility and Virtual Gate Length in GaN HEMT

Kaushik, Pragyey Kumar, Kumar Singh, Sankalp, Gupta, Ankur, Basu, Ananjan, Chang, Edward Yi

Year:

2020

File:

PDF, 3.10 MB

2020

31

Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications

Huang-Ming Lee, Kartika Chandra Sahoo, Yiming Li, Jong-Ching Wu, Edward Yi Chang

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 713 KB

english, 2010

32

[IEEE 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Chengdu, China (2017.7.4-2017.7.7)] 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Bias- and temperature-assisted trapping/de-trapping of ron degradation in D-mode AlGaN/GaN MIS-HEMTs on a Si substrate

Zhang, Jin-Ming, Hsieh, Ting-En, Wu, Tian-Li, Chen, Szu-Hao, Chen, Shi-Xuan, Chou, Po-Chien, Chang, Edward Yi

Year:

2017

Language:

english

File:

PDF, 315 KB

english, 2017

33

[IEEE 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Qingdao, China (2018.10.31-2018.11.3)] 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Electrical Properties of Compound 2D Semiconductor Mo1−xNbxS2

Lu, Peng, Ho, Yen Teng, Chu, Yung-Ching, Zhang, Ming, Chien, Po-Yen, Luong, Tien-Tung, Chang, Edward Yi, Woo, Jason C. S.

Year:

2018

Language:

english

File:

PDF, 3.42 MB

english, 2018

34

Flower-Like Distributed Self-Organized Ge Dots on Patterned Si (001) Substrates

Lee, Huang-Ming, Yang, Tsung-Hsi, Luo, Guangli, Chang, Edward Yi

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 194 KB

english, 2003

35

GaN High-Electron-Mobility Transistor with WNx/Cu Gate for High-Power Applications

Hsieh, Ting-En, Lin, Yueh-Chin, Li, Fang-Ming, Shi, Wang-Cheng, Huang, Yu-Xiang, Lan, Wei-Cheng, Chin, Ping-Chieh, Chang, Edward Yi

Journal:

Journal of Electronic Materials

Year:

2015

Language:

english

File:

PDF, 2.22 MB

english, 2015

36

Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNXSchottky Metal Structures for High-Power Applications

Hsieh, Ting-En, Lin, Yueh-Chin, Chu, Chung-Ming, Chuang, Yu-Lin, Huang, Yu-Xiang, Shi, Wang-Cheng, Dee, Chang-Fu, Majlis, Burhanuddin Yeop, Lee, Wei-I, Chang, Edward Yi

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 2.65 MB

english, 2016

37

Transfer of T or CD8+ Cells from Hemorrhaged Mice Produce Alterations in Bacterial Antigen Specific Plasma Cell Repertoires in Normal Syngeneic Recipients

Abraham, Edward, Freitas, Antonio A., Jagels, Mark, Chang, Yi-Han

Journal:

Year:

1990

Language:

english

File:

PDF, 596 KB

english, 1990

38

[IEEE 2010 International Conference on Enabling Science and Nanotechnology (ESciNano) - Kuala Lumpur, Malaysia (2010.12.1-2010.12.3)] 2010 International Conference on Enabling Science and Nanotechnology (ESciNano) - Ultra-scaled III–V Quantum-Well Field Effect Transistor for THz and post-Si-CMOS digital applications

Chang, Edward Yi

Year:

2010

Language:

english

File:

PDF, 69 KB

english, 2010

39

InAlAs/InGaAs Metamorphic High Electron Mobility Transistor with Cu/Pt/Ti Gate and Cu Airbridges

Chang, Chun-Wei, Chen, Po-Chou, Lee, Huang-Ming, Chen, Szu-Hung, Sahoo, Kartik Chandra, Chang, Edward Yi, Liang, Muh-Wang, Hsieh, Tsung-Eong

Journal:

Japanese Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 236 KB

english, 2007

40

Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method

Lin, KungLiang, Chang, Edward-Yi, Li, Tingkai, Huang, Wei-Ching, Hsiao, Yu-Lin, Tweet, Douglas, Maa, Jer-shen, Hsu, Sheng-Teng

Journal:

MRS Proceedings

Year:

2008

Language:

english

File:

PDF, 277 KB

english, 2008

41

[ECS 216th ECS Meeting - Vienna, Austria (October 4 - October 9, 2009)] ECS Transactions - Electrical Characteristics of HfO

Funamizu, Kiyohisa, Lin, Yueh Chin, Kakushima, Kuniyuki, Ahmet, Parhat, Tsutsui, Kazuo, Sugii, Nobuyuki, Chang, Edward Yi, Hattori, Takeo, Iwai, Hiroshi

Year:

2009

Language:

english

File:

PDF, 684 KB

english, 2009

42

Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate

Wang, Chin-Te, Kuo, Chien-I, Hsu, Heng-Tung, Chang, Edward Yi, Hsu, Li-Han, Lim, Wee-Chin, Miyamoto, Yasuyuki

Journal:

Japanese Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 183 KB

english, 2011

43

Effects of hemorrhagic serum on interleukin-2 generation and utilization

ABRAHAM, EDWARD, TANAKA, TRACI, CHANG, YI-HAN

Journal:

Critical Care Medicine

Year:

1988

File:

PDF, 485 KB

1988

44

Reliability study of high-κ La 2 O 3 /HfO 2 and HfO 2 /La 2 O 3 stacking layers on n-In 0.53 Ga 0.47 As metal–oxide–semiconductor capacitor

Chu, Chung-Ming, Lin, Yueh-Chin, Lee, Wei-I, Dee, Chang Fu, Wong, Yuen-Yee, Majlis, Burhanuddin Yeop, Salleh, Muhamad Mat, Yap, Seong Ling, Chang, Edward Yi

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 1.05 MB

english, 2016

45

[IEEE 2016 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2016.6.12-2016.6.13)] 2016 IEEE Silicon Nanoelectronics Workshop (SNW) - Synthesis of wafer-scale WSe2 by WOx selenization on SiO2 / Si substrates

Chu, Yung-Ching, Jong, Chao-An, Ho, Yen-Teng, Zhang, Ming, Chien, Po-Yen, Hsu, Hung-Ru, Chen, Hung-Yi, Tu, Yung-Yi, Pande, Krishna P., Woo, Jason C.S., Chang, Edward Yi

Year:

2016

Language:

english

File:

PDF, 757 KB

english, 2016

46

Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates

Yuen-Yee Wong, Wei-Ching Huang, Hai-Dang Trinh, Tsung-Hsi Yang, Jet-Rung Chang, Micheal Chen, Edward Yi Chang

Journal:

Journal of Electronic Materials

Year:

2012

Language:

english

File:

PDF, 457 KB

english, 2012

47

Coherent phonon manipulation in coupled mechanical resonators

Okamoto, Hajime, Gourgout, Adrien, Chang, Chia-Yuan, Onomitsu, Koji, Mahboob, Imran, Chang, Edward Yi, Yamaguchi, Hiroshi

Journal:

Year:

2013

Language:

english

File:

PDF, 606 KB

english, 2013

48

Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer

Luc, Quang Ho, Chang, Edward Yi, Trinh, Hai Dang, Lin, Yueh Chin, Nguyen, Hong Quan, Wong, Yuen Yee, Do, Huy Binh, Salahuddin, Sayeef, Hu, Chenming Calvin

Journal:

IEEE Transactions on Electron Devices

Year:

2014

Language:

english

File:

PDF, 2.13 MB

english, 2014

49

Cation Source Dependence of $\bf Ga_{0.5}In_{0.5}P$ Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition

Wu, Janne-Wha, Chang, Chun-Yen, Lin, Kun-Chuan, Chan, Shih-Hsiung, Chen, Horng-Dar, Chen, Po-An, Chang, Edward Yi, Kuo, Mei-Shong

Journal:

Japanese Journal of Applied Physics

Year:

1994

File:

PDF, 336 KB

1994

50

Indium-rich InAlN films on GaN/sapphire by molecular beam epitaxy

Wu, Yue-Han, Wong, Yuen-Yee, Chen, Wei-Chun, Tsai, Dung-Sheng, Peng, Chun-Yen, Tian, Jr-Sheng, Chang, Li, Yi Chang, Edward

Journal:

Materials Research Express

Year:

2014

Language:

english

File:

PDF, 1.13 MB

english, 2014

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